[AMDp1] Oxide TFTs

[AMDp1-5] Transfer Characteristics of H₂O₂-Doped ZrInZnO Thin Film Transistors

*Sangmin Lee¹, Bohyeon Jeon¹, Byoungdeog Choi¹ (1. Sungkyunkwan University (Korea))

Keywords:TFTs, Solution-process, ZrInZnO, Hydrogen peroxide, Positive bias stress

Solution-processed zirconium-indium-zinc-oxide thin-film transistors (ZIZO TFTs) were fabricated with and without hydrogen peroxide (H₂O₂). With an incorporation of H₂O₂ into the channel layer, threshold voltage shift under positive bias stress were improved. We realized the reduced trap density of ZIZO TFTs with 2 M H₂O₂ incorporation.