The 26th International Display Workshops (IDW '19)

講演情報

Poster Presentation

[AMDp1] Oxide TFTs

2019年11月28日(木) 10:40 〜 13:10 Main Hall (1F)

10:40 〜 13:10

[AMDp1-8] Characteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield LayerCharacteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield Layer

*Qian Ma1,2, Xingyu Zhou2, YuanJun Hsu2, Yuanchun Wu2 (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

キーワード:Top-gate Self-aligned, a-IGZO TFTs, Short channel TFT, stability

A top-gate self-aligned oxide amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) was examind for active matrix organic light-emitting diode (AMOLED) display. The device exhibited robust device performance, such as excellent threshold voltage uniformity, high mobility, and good gate bias stress stabilities. Furthermore, remarkable short channel characteristics were achieved.