[DES2] Driving Technology

[DES2-3] Highly Reliable a-IGZO TFT Gate Driver Circuit to Suppress Threshold Voltage Shift of Pull-down TFT

*Jungwoo Lee¹, Jongsu Oh¹, Eun Kyo Jung¹, KeeChan Park², Jae-Hong Jeon³, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea), 2. Konkuk University (Korea), 3. Korea Aerospace University (Korea))

Keywords:Oxide TFT, Gate Driver Circuit, Reliability, Duty Ratio

We present the highly reliable gate driver circuit using AC-driven method of a pull-down TFTs. Two pull-down TFTs are driven with duty ratio of 33.3% and 66.7%, respectively, VOUT discharge completely. The proposed circuit can minimize coupling noise by discharging the Q and VOUT node constantly except for output period.