Polysilicon CMOS TFTs on Ultrathin and Flexible Stainless Steel Substrates

Miki Trifunovic

Presentation information

Oral Presentation

[FLX4] Wearable Sensors and Devices

Fri. Nov 29, 2019 10:40 AM - 12:15 PM Room 107 (1F)

Chair: Yasuyoshi Mishima (National Institute of Advanced Industrial Science and Technology)
Co-Chair: Hiroyuki Endoh (NEC Corp.)

11:55 AM - 12:15 PM

[FLX4-4] Polysilicon CMOS TFTs on Ultrathin and Flexible Stainless Steel Substrates

*Miki Trifunovic¹, Aditi Chandra¹, Mao Ito¹, Sarah Khoo¹, Arvind Kamath¹ (1. Thin Film Electronics Inc. (United States of America))

Keywords:Polysilicon TFT, CMOS, Ultrathin, Flexible, Stainless Steel

CMOS polysilicon TFTs fabricated on flexible stainless steel substrates are thinned down to 5 µm thickness. Bending tests show minimal change in TFT performance at 2.5 mm bending radius after 10,000 tensile bend cycles.