[FMCp3] Metrology & Manufacturing

[FMCp3-8] Effects of Annealing Gas on Electrical Properties of La₂O₃ Gate Dielectrics

*Minjun Song¹, Byoungdeog Choi¹ (1. University of Sungkyunkwan (Korea))

キーワード：MOS-Cs, high-k dielectric, La2O3, oxygen annealing, interface trap density

Solution-processed lanthanum oxide(La₂O₃) films were formed on the Si substrates under N₂ and O₂ ambience annealing conditions. Compared to N₂ conditions, flat-band voltage shifted to positive gate bias direction and leakage current was less for O₂ annealed devices resulted from the reduction of the oxygen-related trap sites in the film.