[FMCp3] Metrology & Manufacturing

[FMCp3-9] Reduction of Oxide Defects in ZrO₂/Al₂O₃/ZrO₂ Dielectrics by Incorporating Hydrogen Peroxide

*Gaeun Lee¹, Byoungdeog Choi¹ (1. Sungkyunkwan University (Korea))

キーワード：high-k, ZrO2, Al2O3, Hydrogen peroxide, solution process

Capacitance- and current-voltage characteristics of ZrO₂/Al₂O₃/ZrO₂ (ZAZ) capacitors with an addition of hydrogen peroxide (H₂O₂) were identified. From the results, leakage current and interface trap density of the H₂O₂-doped devices decreased due to reduction of oxygen vacancies in ZAZ layers. H₂O₂ effect on the electrical behaviors was qualitatively analyzed.