The 26th International Display Workshops (IDW '19)

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Poster Presentation

[FMCp5] Materials & Components

Thu. Nov 28, 2019 2:30 PM - 5:00 PM Main Hall (1F)

2:30 PM - 5:00 PM

[FMCp5-8L] Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

*Nara Lee1, Pyungho Choi1, Byoungdeog Choi1 (1. Sungkunkwan University(Korea))

Keywords:HfZr-Silicate, High-k dielectrics, MOS, Solution process

In this study, Al/(HfZrO4)1-x(SiO2)x/p-Si capacitors were fabricated and evaluated as a function of SiO2 content in the films. From the result, electrical properties enhanced such as oxide charge and breakdown voltage as the SiO2 concentration x increased and reliability improved as well.