[FMCp5] Materials & Components

[FMCp5-8L] Capacitance-Voltage Characteristics of Solution-Based HfZr-Silicate Gate Dielectrics

*Nara Lee¹, Pyungho Choi¹, Byoungdeog Choi¹ (1. Sungkunkwan University(Korea))

キーワード：HfZr-Silicate, High-k dielectrics, MOS, Solution process

In this study, Al/(HfZrO₄)_1-x(SiO₂)_x/p-Si capacitors were fabricated and evaluated as a function of SiO₂ content in the films. From the result, electrical properties enhanced such as oxide charge and breakdown voltage as the SiO₂ concentration x increased and reliability improved as well.