4:00 PM - 4:20 PM
[MEET6-4L] In-situ EUV Irradiation for Etching Residual Removal of AM Mini-LED
Keywords:Mini-LED, EUV, Porous Structure, Etching Residual
Given the demand of high current drive, AM Mini-LED backplane usually uses dense plum-blossom-type design to optimize hole lapping. However, this porous design leads to a serious M2 etching residual issue. By using in-situ EUV irradiation, the infiltration of etchant to porous structure can be increased and the etching residual can be removed without affecting electrical characteristics of the device.