The 26th International Display Workshops (IDW '19)

Presentation information

Oral Presentation

[OLED4] QD Material & Devices

Special Topics of Interest on Quantum Dot Technologies

Thu. Nov 28, 2019 9:00 AM - 10:35 AM Room 204 (2F)

Chair: Takeo Wakimoto (Merck Performance Materials)
Co-Chair: Toshiaki Ikuta (JNC Corp.)

9:40 AM - 10:00 AM

[OLED4-3] “Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

*Ji Eun Yeom1, Dong Hyun Shin1, Mude Nagarjuna Naik1, Raju Lampande1, Jang Hyuk Kwon1 (1. Kyung Hee University (Korea))

Keywords:QLED, Quantum dot, Inverted structure, InP-QD

Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7% , which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.