[PHp1] Phosphors and Devices

[PHp1-5L] Formation of ZnAl₂O₄ Thin Film for Deep Ultraviolet Emitting Phosphor and Evaluation of Luminescence Properties

*Kaito Imagawa¹, Hiroko Kominami¹, Yoichiro Nakanishi¹, Kazuhiko Hara¹ (1. Shizuoka University (Japan))

キーワード：ZnAl2O4 thin film, UV emission, Cathodoluminescence, Electron beam penetration depth

ZnAl₂O₄ thin films for deep UV emitting phosphor were prepared by thermal diffusion of ZnO and a-sapphire substrate at 1000 ^oC. From analysis of UV emission intensity by cathodoluminescence and penetration depth, it is considered that emiting layer of 650 nm was formed.