Mixed Single Layer-Based Quantum Dot Light-Emitting Diodes with the Substrate Temperature Variation of ZnO Layer

BISWAS MOHAMMAD MOSTAFIZUR RAHMAN, HIROYUKI OKADA

doi:https://doi.org/10.36463/idw.2021.0371

2:10 PM - 2:30 PM

[OLED4/PH3-3] Mixed Single Layer-Based Quantum Dot Light-Emitting Diodes with the Substrate Temperature Variation of ZnO Layer

*BISWAS MOHAMMAD MOSTAFIZUR RAHMAN¹, HIROYUKI OKADA¹ (1.University of Toyama (Japan))

cadmium-free quantum dot light emitting diode, , sputtered zinc oxide, , mixed single layer

https://doi.org/10.36463/idw.2021.0371

Mixed single layer-based quantum dot light-emitting diode (QLED) was fabricated using the sputtered ZnO layer, where the substrate temperature was varied from RT to 200℃ to improve the electrical properties and device performances. Maximum power efficiency of 5.01 lm/W, current efficiency of 5.58 cd/A, and external quantum efficiency of 2.41% was achieved for the fabricated QLED.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[OLED4/PH3-3] Mixed Single Layer-Based Quantum Dot Light-Emitting Diodes with the Substrate Temperature Variation of ZnO Layer