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Poster Session

[P] Poster Session

2019年5月13日(月) 18:00 〜 20:30 IMW2019

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[P1] Physical Origin of Excellent Data Retention over 10years at sub-μA Operation in AgW-Alloy Ionic Memory

Marina Yamaguchi (Toshiba Memory Corp.)

【Award Vote】

[P2] Novel Logic Non-Volatile Memory with Highly Reliable Performances for Autotronic Application

Chun Hsiao Li (eMemory Technology Inc.)

【Award Vote】

[P3] Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET

Tarek Ali (Fraunhofer Institute for Photonic Microsystems)

【Award Vote】

[P4] Read Disturb Evaluations of 3D NAND Flash for Highly Read-Intensive Edge-Computing Inference Device for Artificial Intelligence Applications

Pei-Ying Du (Macronix International Co., Ltd. )

【Award Vote】

[P5] 2T-SONOS Cell Using Novel Process Integration on HV-CMOS Platform for Versatile Application

Sungkun Park (SK hynix Inc.)

【Award Vote】

[P6] Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell

Stefan Slesazeck (NaMLab gGmbH)

【Award Vote】

[P7] Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory

Nanbo Gong (IBM T.J. Watson Research Center)

【Award Vote】

[P8] Scaling Split-Gate Flash Memory Technology for Advanced MCU and Emerging Applications

Nhan Do (Microchip Technology Inc.)

【Award Vote】

[P9] Co-design of DNN Model Optimization for Binary ReRAM Array In-memory Processing

Guan Yue (Waseda University)

【Award Vote】

[P10] The Method of Predicting Retention Threshold Voltage Distribution for NAND Flash Memory Based on Back-Propagation Neural Network

Kunliang Wang (Institute of Microelectronics, Peking University)

【Award Vote】

[P11] Retention Characteristics of Hf0.5Zr0.5O2 -based Ferroelectric Tunnel Junctions

Benjamin Max (Technische Universitaet Dresden)

【Award Vote】

[P12] Switching Speed Analysis and Controlled Oscillatory Behavior of a Cr-doped V2O3 Threshold Switching Device for Memory Selector and Neuromorphic Computing Application

Dirk Wouters (RWTH Aachen University)

【Award Vote】

[P13] Quantification of Compositional Runaway During Electroformation in TaOx Resistive Switching Devices

Yuanzhi Ma (Carnegie Mellon University)

【Award Vote】