*Kaiyin Feng¹, Chen Shang², Eamonn Hughes², Rosalyn Koscica², Andrew Clark³, Mukul Debnath³, Gerald Leake⁴, David Harame⁴, Peter Ludewig⁵, John Bowers^1,2 (1. Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara (United States of America), 2. Materials Dept., Univ. of California, Santa Barbara (United States of America), 3. IQE, Inc. (United States of America), 4. RF SUNY Polytechnic Inst. (United States of America), 5. NAsP_III/V GmbH (Germany))

*Nikolaos Panteleimon Diamantopoulos¹, Suguru Yamaoka¹, Takuro Fujii¹, Hidetaka Nishi¹, Toru Segawa¹, Shinji Matsuo¹ (1. NTT Device Technology Labs, NTT Corporation (Japan))

*FREDERIC GRILLOT^1,6, Gabriel Callado^1,2, Shihao Ding¹, Theo Verolet³, Jean Decobert⁴, Christophe Jany⁵, Karim Hassan⁵, Stephane Malhouitre⁵, Daniel Make⁴, A Coquiard⁵, Sylvain Combrié², Alexandre Shen⁴, Alfredo de Rossi² (1. TELECOM PARIS (France), 2. Thales Research and Technolog (France), 3. Nokia (United States of America), 4. III-V Lab (France), 5. CEA LETI (France), 6. Center for High Technology Materials (United States of America))

*Qi LIN¹, Jie HUANG¹, Liying LIN¹, Ying XUE¹, Zengshan XING ², Kam Sing WONG², Kei May LAU¹ (1. Department of Electronic and Computer Eng., Hong Kong Univ. of Sci. and Tech. (Hong Kong), 2. Department of Physics and William Mong Inst. of Nano Sci. and Tech., Hong Kong Univ. of Sci. and Tech. (Hong Kong))

WEI LUO¹, *QI LIN¹, JIE HUANG¹, KAMING WONG¹, LIYING LIN¹, KEIMAY LAU¹ (1. The Hong Kong University of Science and Technology (Hong Kong))