125℃ CW Operation of 1.2–1.3 &micro;m Wavelength GaAs-based Lasers with Type-II (GaIn)As/Ga(AsSb)/(GaIn)As-“W”-Quantum Well

Takashi Go

講演情報

Oral presentation

[WA] Quantum Wells, Wires, and Dots

2022年10月19日(水) 08:30 〜 10:40 International Conference Hall (3F)

Session Chairs: Larry Coldren(UC Santa Barbara), Yasutomo Ota(Keio University)

09:55 〜 10:10

[WA-06] 125℃ CW Operation of 1.2–1.3 µm Wavelength GaAs-based Lasers with Type-II (GaIn)As/Ga(AsSb)/(GaIn)As-“W”-Quantum Well

*Takashi Go¹, Takuma Fuyuki¹, Daisuke Inoue¹, Hiroyuki Yoshinaga¹, Mitsuru Ekawa¹, Takashi Ishizuka¹, Susumu Yoshimoto¹, Peter Ludewig², Ada Bäumner², Antje Ruiz Perez², Wolfgang Stolz² (1. Sumitomo Electric Industries, Ltd. (Japan), 2. NAsP III/V GmbH (Germany))

Presentation style: On-site (in-person)

キーワード：Semiconductor lasers