[Mon-B2] Electronic Materials and Processing

[Mon-B2-5] Award Applied
MOVPE Homoepitaxial Growth on N-polar Annealed Sputter-Deposited AlN Films

*Gaku Namikawa¹, Kanako Shojiki^1,2, Riku Yoshida¹, Kenjiro Uesugi¹, Hideto Miyake¹ (1. Mie Univ. (Japan), 2. Osaka Univ. (Japan))

キーワード：III-nitride semiconductor, AlN, N-polarity, Sputtering, MOVPE, TEM