[Mon-I2] Data-driven materials science and process informatics

[Mon-I2-7] Award Applied
Phonon and Point Defect Related Properties of GaN Studied using Neural Network Potential

*Koji Shimizu¹, Emi Minamitani², Satoshi Watanabe¹ (1. The University of Tokyo (Japan), 2. Institute for Molecular Science (Japan))

キーワード：neural network potential, GaN, phonon, point defect