*Mary Clare Escano1, Maria Herminia Balgos2,3, Tien Quang Nguyen4, Elizabeth Ann Prieto5,6, Elmer Estacio5, Arnel Salvador5, Armando Somintac5, Rafael Jaculbia3, Norihiko Hayazawa3, Yousoo Kim3, Masahiko Tani1
(1. Research Center for Development of Far-Infrared Region, University of Fukui (Japan), 2. Innovative Photon Manipulation Research Team, RIKEN Center for Advanced Photonics (Japan), 3. Surface and Interface Science Laboratory, RIKEN (Japan), 4. Research Initiative for Supra-Materials, Shinshu University (Japan), 5. National Institute of Physics, University of the Philippines (Philippines), 6. Materials Science and Engineering Program, University of the Philippines (Philippines))
キーワード:semiconductor defects, two-step photon absorption, LT-GaAs , STM/STS , DFT-SO , terahertz radiation
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