[Tue-H1] Plasma Science and Technologies

[Tue-H1-4] In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO₂ films with hydrogen-contained fluorocarbon down-flow plasmas

*Shih-Nan Hsiao¹, Nicolay Britun¹, Thi-Thuy-Naga Nguyen¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1. Nagoya University (Japan))

Keywords:Hydrogen fluoride, FTIR, etching selectivity, SiN