In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO2 films with hydrogen-contained fluorocarbon down-flow plasmas

Shih-Nan Hsiao

12:30 〜 12:45

[Tue-H1-4] In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO₂ films with hydrogen-contained fluorocarbon down-flow plasmas

*Shih-Nan Hsiao¹, Nicolay Britun¹, Thi-Thuy-Naga Nguyen¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1. Nagoya University (Japan))

キーワード：Hydrogen fluoride, FTIR, etching selectivity, SiN

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講演情報

[Tue-H1] Plasma Science and Technologies

[Tue-H1-4] In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO₂ films with hydrogen-contained fluorocarbon down-flow plasmas

講演情報

[Tue-H1] Plasma Science and Technologies

[Tue-H1-4] In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO2 films with hydrogen-contained fluorocarbon down-flow plasmas

[Tue-H1-4] In situ monitoring hydrogen fluoride molecular density and its effects on etch selectivity of SiN over SiO₂ films with hydrogen-contained fluorocarbon down-flow plasmas