[Tue-H2] Plasma Science and Technologies

[Tue-H2-2] Atomic Layer Etching of Si by fluorine radicals with Ar plasmas - Molecular Dynamics Simulation Study

Erin Joy Capdos Tinacba¹, *Satoshi Hamaguchi¹ (1. Osaka University (Japan))

キーワード：atomic layer etching (ALE), molecular dynamics simulation, plasma surface interaction, plasma etching , semiconductor processing