[Tue-J2] Joint session of Low-dimensional Quantum Materials and Nanometer Structures

[Tue-J2-5] Thickness effects of dilute GaAs nitride quantum wells on optical spin properties of tunnel-coupled InAs quantum dots

*Shino Sato¹, Masayoshi Hosoe¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ. (Japan))

Keywords:quantum dots, photoluminescence, dilute nitride III-V semiconductor, spin dynamics, tunnel-coupled structure