[Tue-PO1B] Poster Session (17:00-18:30) Category B

[Tue-PO1B-19] Structural and optical properties of InAs quantum dots capped with GaAs grown at different rates

*Sohsuke Izumi¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ. (Japan))

Keywords:quantum dots, photoluminescence, III-V compound semiconductor, transmission electron microscopy, molecular beam epitaxy