PN Junction Based Self-selective Property in N-doped Cr2Ge2Te6 Phase Change Memory

SHUANG Yi

Presentation information

General Session

9.Electric/Magnetic Materials » Electric/Electronic/Optical Materials

[G] Phase change memory & Supercondctors

Fri. Sep 13, 2019 1:00 PM - 3:15 PM E (D22 at 1st Flr. Building D for General Education)

座長:阿部世嗣(公益財団法人電磁材料研究所)、藤原康文(大阪大学)

1:45 PM - 2:00 PM

[171] PN Junction Based Self-selective Property in N-doped Cr₂Ge₂Te₆ Phase Change Memory

*SHUANG Yi¹, HATAYAMA Shogo¹, AN Jun-Seop², ANDO Daisuke¹, SONG Yun-Heub², SUTOU Yuji¹ (1. Tohoku Univ.、2. Hanyang Univ.)

Keywords:Phase change memory、Self-selective、N doped Cr₂Ge₂Te₆

In this study, we propose a hybrid diode configuration composed of n-type InGaZnO₄ (IGZO) and p-type NCrGT pn junction and NCrGT/W Schottky junction which enables a bi-directional selector behavior.

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Presentation information

[G] Phase change memory & Supercondctors

[171] PN Junction Based Self-selective Property in N-doped Cr2Ge2Te6 Phase Change Memory

Password

[171] PN Junction Based Self-selective Property in N-doped Cr₂Ge₂Te₆ Phase Change Memory