[G] 相変化材料・超伝導材料

[171] PN Junction Based Self-selective Property in N-doped Cr₂Ge₂Te₆ Phase Change Memory

*双 逸¹、畑山 祥吾¹、Jun-Seop AN²、安藤 大輔¹、Yun-Heub SONG²、須藤 祐司¹ (1. Tohoku Univ.、2. Hanyang Univ.)

キーワード：Phase change memory、Self-selective、N doped Cr₂Ge₂Te₆

In this study, we propose a hybrid diode configuration composed of n-type InGaZnO₄ (IGZO) and p-type NCrGT pn junction and NCrGT/W Schottky junction which enables a bi-directional selector behavior.