On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

CHUANG Lu-Chung

Presentation information

General Session

6.Materials Processing » Melting and solidification process/ High temperature process

[G] High temperature process/Materials Physics/Thermodynamics

Thu. Sep 12, 2019 9:30 AM - 11:45 AM A (C22 at 2nd Flr. Building C for General Education)

座長:松浦宏行(東京大学)、林幸(東京工業大学)

10:15 AM - 10:30 AM

[3] On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

*CHUANG Lu-Chung¹, MAEDA Kensaku¹, SHIGA Keiji¹, MORITO Haruhiko¹, FUJIWARA Kozo¹ (1. 東北大金研)

Keywords:Grain boundary、Directionial solidification、Multicrystalline silicon

Grain boundaries develop grooves at solid/melt interface. The growth behaviors of the grooves differ depending on the dihedral angles. A theory is proposed in this study to explain the mechanisms.

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