[G] 高温プロセス・物性・熱力学

[3] On the growth behavior of the grooves at grain/grain/melt triple phase boundary during solidification of multicrystalline silicon

*荘 履中¹、前田 健作¹、志賀 敬次¹、森戸 春彦¹、藤原 航三¹ (1. 東北大金研)

キーワード：Grain boundary、Directionial solidification、Multicrystalline silicon

Grain boundaries develop grooves at solid/melt interface. The growth behaviors of the grooves differ depending on the dihedral angles. A theory is proposed in this study to explain the mechanisms.