The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si

HU Kuankan

Presentation information

General Session

6.Materials Processing » Melting and solidification process/ High temperature process

[G] High temperature process/Materials Physics/Thermodynamics

Thu. Sep 12, 2019 9:30 AM - 11:45 AM A (C22 at 2nd Flr. Building C for General Education)

座長:松浦宏行(東京大学)、林幸(東京工業大学)

11:00 AM - 11:15 AM

[5] The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si

*HU Kuankan¹, MAEDA Kensaku¹, SHIGA Keiji¹, MORITO Haruhiko¹, FUJIWARA Kozo¹ (1. 東北大金研)

Keywords:Crystal/melt interface、Instability、Grain boundary、Multi-crystalline silicon

The instability of crystal/melt interfaces including Σ3, small-angle and large-angle grain boundaries during the unidirectional growth of Si was investigated, using an in situ observation system.

Abstract password authentication.
Password is required to view the abstract. Please enter a password to authenticate.