[G] 高温プロセス・物性・熱力学

[5] The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si

*胡 寛侃¹、前田 健作¹、志賀 敬次¹、森戸 春彦¹、藤原 航三¹ (1. 東北大金研)

キーワード：Crystal/melt interface、Instability、Grain boundary、Multi-crystalline silicon

The instability of crystal/melt interfaces including Σ3, small-angle and large-angle grain boundaries during the unidirectional growth of Si was investigated, using an in situ observation system.