日本金属学会2020年秋期(第167回)講演大会

Presentation information

一般講演

6.Materials Processing » Melting and solidification process/High temperature process

[G] Melting and solidification process/High temperature process(1)

Thu. Sep 17, 2020 1:00 PM - 3:20 PM Rm. P (ZoomRm.P)

Chair:Osamu Takeda, Kazuki Morita(Tokyo Univ.) Sub Chairman (assistant):Shunpei Ozawa(Chiba Inst. of Tech), Masayoshi Adachi(Tohoku Univ.)

1:00 PM - 1:15 PM

[341] Solid solubility and state of Ti in 3C-SiC

*Hui CHEN1, Kazuki MORITA1 (1. University of Tokyo)

Keywords:Solid solubility、Silicon carbide、Titanium、Site preference

The solid solubility limits of Ti in 3C-SiC are 37.2 and 36.4 ppmw at 1723 and 1623 K, respectively. SXES gives an experimental evidence for that the defect for Ti in 3C-SiC is Si-site substitution.

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