Total hemispherical emissivity measurement of molten Ni-Al alloy<sub></sub>

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一般講演

6.Materials Processing » Melting and solidification process/High temperature process

[G] Melting and solidification process/High temperature process(1)

Thu. Sep 17, 2020 1:00 PM - 3:20 PM Rm. P (ZoomRm.P)

Chair:Osamu Takeda, Kazuki Morita(Tokyo Univ.) Sub Chairman (assistant):Shunpei Ozawa(Chiba Inst. of Tech), Masayoshi Adachi(Tohoku Univ.)

3:05 PM - 3:20 PM

*KAZUKI FUJITA¹, Masayoshi Adachi², Makoto Ohtsuka², Hiroyuki Fukuyama² (1. IMRAM, Tohoku univ. (M2), 2. IMRAM, Tohoku univ.)

Keywords:Ni-Al合金、半球全放射率、電磁浮遊、非接触測定

溶融Ni-Al合金は化学的な活性が高く試料が汚染されやすいため，半球全放射率の報告はない．そこで本研究では，静磁場印加電磁浮遊装置を用い，非接触環境下での溶融Ni-Al合金の半球全放射率測定を行った．

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