日本金属学会2020年秋期(第167回)講演大会

Presentation information

一般講演

6.Materials Processing » Melting and solidification process/High temperature process

[G] Melting and solidification process/High temperature process(2)

Fri. Sep 18, 2020 1:00 PM - 4:25 PM Rm. P (ZoomRm.P)

Chair:Yasuda Hideyuki(Kyoto University), Kozo Fujiwara(Tohoku Univ.) Sub Chairman (assistant):Sergey KOMAROV(Tohoku Univ.), Yukinobu Natsume(Akita Univ.), Yasushi Shibuta(Tokyo Univ.)

1:15 PM - 1:30 PM

[358] In-situ observation of solidification of binary Ni-Si melt

*Lu-Chung CHUANG1, Kensaku MAEDA1, Keiji SHIGA1, Haruhiko MORITO1, Kozo FUJIWARA1 (1. IMR, Tohoku University)

Keywords:Polyphase solidification、Crystal growth、Directional solidification、Silicon、Nickel

During solidification of binary Ni-Si melts containing more than 70% Si, Si dendrites grow first and confine Ni-rich melt. Enclosed melts form NiSi and growth kinetics determines its distribution.

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