Session information

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公募シンポジウム講演

[S9] S9 Materials Science and high temperature processing of widegap materials III

Thu. Sep 16, 2021 10:30 AM - 11:50 AM Rm. M (ZoomRm.M)

座長:美濃輪武久(信越化学工業)

※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間5分、基調講演と招待講演は5～10分）

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10:30 AM - 11:10 AM

[S9.1] [Keynote Lecture] Numerical simulation and thermophysical properties on crystal growth processes

*Takao Tsukada¹ (1. Tohoku Univ.)

11:10 AM - 11:30 AM

[S9.2] Thermophysical property measurements and thermal fluid analysis for solution growth of AlN crystal using Ni-Al flux

*Masayoshi ADACHI¹, Kazuki FUJITA¹, Makoto OHTSUKA¹, Hiroyuki FUKUYAMA¹ (1. Tohoku Univeristy)

11:30 AM - 11:50 AM

[S9.3] Effect of Prandtl number on SiC solution growth

*Sakiko KAWANISHI¹, Mai ABE¹, Takeshi YOSHIKAWA², Hiroyuki SHIBATA¹ (1. IMRAM Tohoku Univ., 2. IIS U.Tokyo)

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