[G] Electric/Electronic/Optical Materials

[250] Site preference of V in 6H-SiC: A combined PL and theoretical calculation study

*Hui Chen¹, Kazuki Morita² (1. Student,School of Engineering, The Univ. of Tokyo, 2. School of Engineering, The Univ. of Tokyo)

Keywords:バナジウム、6H-SiC、PL、理論計算、格子欠陥

The PL spectra for the V-doped 6H-SiC were measured at low temperatures, and the corresponding theoretical calculation was performed to explain the origins of the peaks in the experimental PL spectra.