[G] 電気・電子・光関連材料

[250] 6H-SiCにおけるVの固溶形態：PLと理論計算

*陳 輝¹、森田 一樹² (1. 東大工（院生）、2. 東大工（教授）)

キーワード：バナジウム、6H-SiC、PL、理論計算、格子欠陥

The PL spectra for the V-doped 6H-SiC were measured at low temperatures, and the corresponding theoretical calculation was performed to explain the origins of the peaks in the experimental PL spectra.