[G] 溶融・凝固プロセス 高温プロセス

[81] Crystallographic orientation and growth velocity anisotropy in melt growth of silicon

*Shashank　Shekhar Mishra¹, Lu-Chung Chuang¹, Nozawa Jun¹, Kensaku Maeda¹, Haruhiko Morito¹, Kozo Fujiwara¹ (1. Institute for Materials Research, Tohoku University)

キーワード：Crystal growth、Interface、Silicon、Crystallographic orientation

It is well-known fact that crystal growth is highly anisotropic. This work experimentally verifies the growth velocity anisotropy in melt growth of silicon.