[G] Melting and solidification process/High temperature process

[87] Groove formation of Σ9 grain boundaries at solid/melt interface of Si

*Lu-Chung CHUANG¹, Kensaku MAEDA¹, Jun NOZAWA¹, Haruhiko MORITO¹, Kozo FUJIWARA¹ (1. IMR Tohoku Univ.)

Keywords:Grain boundary、Directional solidification、In situ observation、Multicrystalline Si

In situ observation of Σ9 GBs during growth of Si shows that only highly deviated Σ9 GBs developed groove at interface, which suggests that interfacial energy contributes to groove formation.