[G] 溶融・凝固プロセス 高温プロセス

[87] Groove formation of Σ9 grain boundaries at solid/melt interface of Si

*荘 履中¹、前田 健作¹、野澤 純¹、森戸 春彦¹、藤原 航三¹ (1. 東北大金研)

キーワード：Grain boundary、Directional solidification、In situ observation、Multicrystalline Si

In situ observation of Σ9 GBs during growth of Si shows that only highly deviated Σ9 GBs developed groove at interface, which suggests that interfacial energy contributes to groove formation.