[P] P81~P85

[P85] Effect of sputtering condition on constituent phase and electrical property of MnTe₂ film

*SHIH　YUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1. 東北大工、2. 東北大 (AIMR))

Keywords:Phase change random access memory、Semiconductor、Radio frequency sputtering、MnTe₂、Thin film

In order to know if MnTe₂ can be used as PCRAM, we investigated the effect of sputtering condition on the constituent phase and electrical property of MnTe₂ films.