[P] P81~P85

[P85] Effect of sputtering condition on constituent phase and electrical property of MnTe₂ film

*李 世元¹、双 逸²、安藤 大輔¹、須藤 祐司^1,2 (1. 東北大工、2. 東北大 (AIMR))

キーワード：Phase change random access memory、Semiconductor、Radio frequency sputtering、MnTe₂、Thin film

In order to know if MnTe₂ can be used as PCRAM, we investigated the effect of sputtering condition on the constituent phase and electrical property of MnTe₂ films.