[G] 原子力材料

[271] Evolution of the F82H/Cr interface during diffusion bonding above and below Ac₁ temperature

*Reuben HOLMES¹, Li BO¹, Lijuan CUI¹, Sho KANO¹, Huilong YANG², Hiroaki ABE¹ (1. The University of Tokyo、2. Shanghai Jiao Tong University)

キーワード：F82H、Chromium、Diffusion bonding、Interface、Fusion materials

This study examines the solid-state diffusion bonding of F82H and Cr at various temperatures both above and below Ac₁ temperature (1089 K), to understand the evolution of the bonded F82H/Cr interface.