[G] 溶融・凝固プロセス 高温プロセス

[333] Ni-Alフラックス法によるAlNの結晶成長挙動に及ぼす坩堝材の影響

*朴 珉秀¹、大塚 誠¹、安達 正芳¹、福山 博之¹ (1. 東北大 多元研)

キーワード：Aluminum nitride、Single-crystalline、Solution growth method、Driving force、Thermodynamic

Growth rates of AlN layer were strongly affected by growth temperature and material of crucible. The highest growth rate was obtained when tgrowth temperature was 1720 K by using BN crucible.