[G] Electronic Materials/Terahertz Light

[299] Phase change behavior in sputter-deposited RuTe₂ thin film

*SHIH　YUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1. Tohoku Univ. Eng., 2. Tohoku Univ. AIMR)

Keywords:dichalcogenide、thin film、RuTe₂、phase change material、RF sputtering

The RuTe₂ thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed to different temperatures and the physical properties had been measured.