[G] 電子材料・テラヘルツ光

[299] Phase change behavior in sputter-deposited RuTe₂ thin film

*李 世元¹、双 逸²、安藤 大輔¹、須藤 祐司^1,2 (1. 東北大工、2. 東北大AIMR)

キーワード：dichalcogenide、thin film、RuTe₂、phase change material、RF sputtering

The RuTe₂ thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed to different temperatures and the physical properties had been measured.