11:15 〜 11:30
[SCG19-09] Hydrogen mobility in transition zone silicates
★招待講演
キーワード:diffusion, molecular dynamics, mantle silicates
Hydrogen defects in mantle silicates adopt a variety of charge-balanced defects, including VMg’’+2(H*), VSi’’’’+4(H*), and VSi’+(Mg+2H*). Constraining the defect mechanism experimentally can be quite difficult, as it relies almost entirely on vibrational spectroscopy whose interpretation can often be controversial. Here we use a computational alternative: we study the above-mentioned defect mechanisms using molecular dynamics simulations based on the density-functional theory, in the VASP implementation. We perform isokinetical NVT simulations at 2000 and 2500 K using supercells containing 16 equivalent formula units of Mg2SiO4.
Our results show that temperature has a tremendous effect on mobility. H is significantly more mobile when incorporated as VMg’’+2H* defects than as hydrogarnet defects and that VMg’’+2H* defects are more mobile in wadsleyite than ringwoodite. This result is the opposite from the proton conductivity inferences of Yoshino et al. [2008] and Huang et al [2006], as well as the observed increase in electrical conductivity with depth through the transition zone [e.g. Kuvshinov et al, 2005; Olsen 1998].
Over the simulation time of several tens of picoseconds the H travel over several lattice sites. However, during its path it spends a considerable amount of time pinned in the defect sites. The lowest mobility is for the VSi’’’’+4(H*) defect, where the H atoms remain inside the octahedron from which they replaced the Si.
Our results show that temperature has a tremendous effect on mobility. H is significantly more mobile when incorporated as VMg’’+2H* defects than as hydrogarnet defects and that VMg’’+2H* defects are more mobile in wadsleyite than ringwoodite. This result is the opposite from the proton conductivity inferences of Yoshino et al. [2008] and Huang et al [2006], as well as the observed increase in electrical conductivity with depth through the transition zone [e.g. Kuvshinov et al, 2005; Olsen 1998].
Over the simulation time of several tens of picoseconds the H travel over several lattice sites. However, during its path it spends a considerable amount of time pinned in the defect sites. The lowest mobility is for the VSi’’’’+4(H*) defect, where the H atoms remain inside the octahedron from which they replaced the Si.