日本地球惑星科学連合2016年大会

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インターナショナルセッション(口頭発表)

セッション記号 S (固体地球科学) » S-CG 固体地球科学複合領域・一般

[S-CG19] Hydrogen in the Earth's interior from the crust to the core

2016年5月23日(月) 10:45 〜 12:15 201B (2F)

コンビーナ:*Mysen Bjorn(Geophysical Laboratory, Carnegie Inst. Washington)、大谷 栄治(東北大学大学院理学研究科地学専攻)、井上 徹(愛媛大学地球深部ダイナミクス研究センター)、座長:Bjorn Mysen(Geophysical Laboratory, Carnegie Inst. Washington)

11:15 〜 11:30

[SCG19-09] Hydrogen mobility in transition zone silicates

★招待講演

*Razvan Caracas1Wendy Panero2 (1.CNRS, Ecole Normale Superieure de Lyon, University of Lyon, Laboratoire de Geologie de Lyon, Lyon, France、2.Ohio State University, School of Earth Sciences, Columbus OH USA)

キーワード:diffusion, molecular dynamics, mantle silicates

Hydrogen defects in mantle silicates adopt a variety of charge-balanced defects, including VMg’’+2(H*), VSi’’’’+4(H*), and VSi’+(Mg+2H*). Constraining the defect mechanism experimentally can be quite difficult, as it relies almost entirely on vibrational spectroscopy whose interpretation can often be controversial. Here we use a computational alternative: we study the above-mentioned defect mechanisms using molecular dynamics simulations based on the density-functional theory, in the VASP implementation. We perform isokinetical NVT simulations at 2000 and 2500 K using supercells containing 16 equivalent formula units of Mg2SiO4.
Our results show that temperature has a tremendous effect on mobility. H is significantly more mobile when incorporated as VMg’’+2H* defects than as hydrogarnet defects and that VMg’’+2H* defects are more mobile in wadsleyite than ringwoodite. This result is the opposite from the proton conductivity inferences of Yoshino et al. [2008] and Huang et al [2006], as well as the observed increase in electrical conductivity with depth through the transition zone [e.g. Kuvshinov et al, 2005; Olsen 1998].
Over the simulation time of several tens of picoseconds the H travel over several lattice sites. However, during its path it spends a considerable amount of time pinned in the defect sites. The lowest mobility is for the VSi’’’’+4(H*) defect, where the H atoms remain inside the octahedron from which they replaced the Si.