[M-IS12] 結晶成⻑、溶解における界⾯・ナノ現象

[MIS12-07] コロイド結晶のヘテロエピタキシャル成長メカニズム

*野澤 純¹、新家 寛正¹、岡田 純平¹、宇田 聡¹ (1.東北大学)

キーワード：コロイド結晶、エピタキシャル成長

The epitaxial growth technique is commonly employed to growth thin-film semiconductor crystals to control crystal growth such as formation phase and crystal orientation. In similar, template-assisted fabrication technique in the colloidal crystals including “colloidal epitaxy” is promising technique for the structural control. In this study, the heteroepitaxial growth using foreign colloidal crystals as a substrate is explored, which contrasts to the conventional colloidal epitaxy using similar lattice spacing between epitaxial layer and the substrate (homoepitaxial growth). We demonstrate growth modes (FM, SK, and VW mode) vary with misfit ratio (lattice spacing difference between epitaxial layer and substrate) and interparticle interactions as the same with atomic system. Transition of growth mode (from SK to VW) and coexisting of different growth modes (FM and VW) are recognized. In addition, layer acts as buffer layer for three-dimensional (3D) islands is found in the SK mode. The heteroepitaxy is quite efficient technique of the structural control of colloidal crystals.