[27p-A3-1~17] 8.4 Plasma etching

Wed. Mar 27, 2013 1:30 PM - 6:00 PM A3 (K1 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-A3-1] Effect of Mask Line-Edge-Roughness on Wiggling

^○Naoyuki Kofuji¹, Nobuyuki Negishi¹, Hiroaki Ishimura², Toshiaki Nishida², Hitoshi Kobayashi² (Hitachi CRL¹, Hitachi High-Tech²)

[27p-A3-2] Correlation between Plasma Parameters and Etching Shape of Si in HBr/O2/N2 Plasma

^○Yasuhiro Nojiri¹, daiki Iino¹, Rikyu Ikariyama¹, Masato Sawada¹, Keiji Suzuki¹, Takeshi Yamauchi¹ (Corporate Manufacturing Engineering Center, Toshiba Corp.¹)

[27p-A3-3] Behavior of Br radical in HBr inductively coupled plasma

^○Daiki Iino¹, Yasuhiro Nojiri¹, Keiji Suzuki¹, Takumi Oike², Yoshitaka Fujii², Hirotaka Toyoda^2,3 (Corporate Manufacturing Engineering Center, Toshiba¹, Nagoya Univ.², PLANT, Nagoya Univ.³)

[27p-A3-4] Damage and profile prediction on plasma processes using on-wafer monitoring system

^○Tomohiro Kubota¹, Michio Sato², Takuya Iwasaki³, Kohei Ono³, Seiji Samukawa^1,4 (IFS, Tohoku Univ.¹, Harada Corp.², Mizuho R&I, Inst.³, WPI-AIMR, Tohoku Univ.⁴)

[27p-A3-5] Reaction potentials of F2+NOx(x=1-2) and the rate coefficients

^○Toshio Hayashi¹, Satomi Tajima¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya University¹)

[27p-A3-6] In-Situ Scanning Tunneling Microscopy of Low-Energy Ion Induced Damage Utilizing Shadowing Effect

^○（B）Kotaro Mura¹, Takefumi Kamioka^1,2, Fumiya Isono^1,2, Yuji Kawamura^1,2, Yasuhiro Shikahama^1,2, Hiroki Yamashita^1,2, Kohei Yamada¹, Hiroki Kosugiyama¹, Shuichiro Hashimoto¹, Takanobu Watanabe^1,2 (Waseda Univ.¹, JST-CREST²)

[27p-A3-7] Influence of last process on gas phase radical density in H2/N2 plasma and its control

^○Suzuki Toshiya¹, Takeda Keigo^1,2, Kondo Hiroki¹, Ishikawa Kenji¹, Sekine Makoto^1,2, Hori Masaru^1,2 (Nagoya University¹, JST-CREST²)

[27p-A3-8] Research on plasma etching mechanism of AlGaN

^○（M1）Jiadong Cao¹, Ryosuke Kometani¹, Yi Lu¹, Jongyun Park¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

[27p-A3-8.1] Break(15min)

[27p-A3-9] Molecular Dynamics Analysis of Surface Reaction Kinetics in Si etching by HBr Plasmas

^○Nobuya Nakazaki¹, Hirotaka Tsuda¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

[27p-A3-10] △Analysis of Polymer Formation Processes in SiN Etching by Hydrofluorocarbon (HFC) plasmas

^○（M1）Keita Miyake¹, Michiro Isobe¹, Masanaga Fukasawa², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (Osaka Univ.¹, Sony corporation²)

[27p-A3-11] △Effects of N⁺ Ion Irradiation on Etching Processes of Magnetic Materials

^○Yu Muraki¹, Hu Li¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (Graduate School of Engineering, Osaka Univ.¹)

[27p-A3-12] △Analysis of Ta Sputtering by Energetic Ion Injections at Oblique Angles for the Assessment of Ta-mask Profile Control

^○Hu Li¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (Graduate School of Engineering, Osaka Univ.¹)

[27p-A3-13] △Molecular Dynamics Simulation of Si Surface Oxidation Processes by Oxygen Gas cluster Ion Beams.

^○（D）Kohei Mizotani¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (Osaka Univ.¹)

[27p-A3-14] △Mechanism of Highly Selective and Damage-Free SiN Etching Using Neutral Beam

^○Daiki Nakayama¹, Akira Wada¹, Tomohiro Kubota¹, Seiji Samukawa^1,2 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.²)

[27p-A3-15] △Mechanism of Generating Active Species and Etch Reaction in CH_xF_y Plasma (II)

^○Yusuke Kondo¹, Yudai Miyawaki¹, Keigo Takeda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Toshio Hayashi¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

[27p-A3-16] Real-time / in-situ electron spin resonance analysis of plasma surface interactions (4)

Kenji Ishikawa¹, Hideo Horibe², Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹, ^○Haoran Wang¹ (Nagoya Univ¹, Kanazawa Inst. Technol²)

[27p-A3-17] Surface roughness of ArF photoresist irradiated plasma processes

Takuya Takeuchi¹, ^○Kenji Ishikawa¹, Yuchi Setsuhara², Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Osaka Univ.²)

Session information

[27p-A3-1~17] 8.4 Plasma etching