[27p-F2-1~15] 6.3 Oxide-based electronics

Wed. Mar 27, 2013 1:30 PM - 5:30 PM F2 (E3 3F-303)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-F2-1] Characteristics of BiFeO₃ Ferroelectric Resistive Switching Memory Controlled by Engineering the Interfacial Band Structure

^○Atsushi Tsurumaki-Fukuchi¹, Hiroyuki Yamada¹, Akihito Sawa¹ (AIST¹)

[27p-F2-2] △Observation of local redox reactions in unipolar resistive switching memory devices

^○Kohei Fujiwara^1,2, Koji Horiba^3,4,5, Naoka Nagamura^4,5, Masaharu Oshima^4,5, Hidenori Takagi^2,6 (ISIR¹, RIKEN², KEK³, SRRO⁴, Univ. of Tokyo⁵, Univ. of Tokyo⁶)

[27p-F2-3] △Atmosphere dependence of memory characteristics in NiO-ReRAM

^○Ryosuke Ogata¹, Kentaro Kinoshita^1,2, Masataka Yoshihara¹, Satoru Kishida^1,2 (Tottori Univ¹, Tottori Univ. Electronic Display Research Center²)

[27p-F2-4] △A role of electrode in resistive switching effect of metal-oxides

^○Sang-Gyu Koh¹, Kentaro Kinoshita^1,2, Takahiro Fukuhara¹, Satoru Kishida^1,2 (Tottori Univ¹, TEDREC²)

[27p-F2-5] △Difficulty in Acquirement of Reset Parameters in Filament-type Resistive Memories

^○Takumi Moriyama¹, Kentaro Kinoshita^1,2, Ryosuke Koishi¹, Shigeyuki Tsuruta¹, Satoru Kishida^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

[27p-F2-6] △Evaluation of Two-dimensional Oxide Nanoparticles Array using Conductive-AFM

^○Keisuke Kado^1,2, Takahiko Ban^1,2, Mutsunori Uenuma^1,2, Yasuaki Ishikawa^1,2, Ichiro Yamashita^1,2, Yukiharu Uraoka^1,2 (nara inst. of sci. and tech.¹, core research for evolutional sic. and tech.²)

[27p-F2-7] Ferroelectric Field Effect in Pseudotetragonal BiFeO₃/ CaMnO₃ Heterostructures

^○Hiroyuki Yamada^1,2, Philippe Altuntas², Arnaud Crassous², St?phane Fusil², Eric Jacquet², Javier Villegas², Karim Bouzehouane², Manuel Bibes², Agn?s Barth?l?my² (AIST¹, CNRS-Thales²)

[27p-F2-8] Investigation of the electronic phase behaviour and colossal magnetroresistance in (La,Pr,Ca)MnO3 nanowall wires

^○Yasushi Fujiwara¹, Azusa Hattori¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR,Osaka Univ.¹)

[27p-F2-8.1] Break(15min)

[27p-F2-9] Strain Control of Nd_0.5Sr_0.5MnO₃ Thin Films Using Sr₃Al₂O₆ Buffer layers

^○Yasuyuki Hikita¹, Di Lu², Hiroki Sato^1,3, Bongju Kim², Takeaki Yajima⁴, Christopher Bell¹, Harold Hwang^1,2 (SLAC National Accelerator Laboratory¹, Stanford Univ.², Univ. of Tokyo³, Univ. of Tokyo⁴)

[27p-F2-10] Optical investigation of Pr_1-xCa_xMnO₃ films by spectroscopic ellipsometry

^○Masaki Yamada¹, Toshihiro Nakamura¹ (Kyoto Univ.¹)

[27p-F2-11] Structural characterization of the electric-field induced metallic states in VO₂

^○Masaki Nakano^1,2, Daisuke Okuyama¹, Soshi Takeshita³, Hiroyuki Ohsumi³, Samuel Tardif³, Keisuke Shibuya^1,4, Takafumi Hatano¹, Shimpei Ono^1,5, Hirokatsu Yumoto⁶, Takahisa Koyama⁶, Haruhiko Ohashi⁶, Masaki Takata³, Masashi Kawasaki^1,7, Yasujiro Taguchi¹, Takahisa Arima^2,3, Yoshihiro Iwasa^1,7, Yoshinori Tokura^1,7 (RIKEN CERG/CMRG¹, Dept. Adv. Mater. Sci., Univ. Tokyo², RIKEN SPring-8³, AIST⁴, CRIEPI⁵, JASRI⁶, Dept. Appl. Phys., Univ. Tokyo⁷)

[27p-F2-12] Distributions of forming characteristics in Pt/NiO/Pt stack structures

^○Yusuke Nishi¹, Tatsuya Iwata¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

[27p-F2-13] A role of water on filament formation in HfO₂-CB-RAM

^○Sho Hasegawa¹, Kentaro Kinosita^1,2, Shigeyuki Turuta¹, Satoru Kishida^1,2, Yutaro Enomoto¹ (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

[27p-F2-14] Development of Sputtering Technology of Ta₂O₅/TaO_x Stacked Film for ReRAM Mass-Production

^○Natsuki Fukuda¹, Kazunori Fukuju¹, Yutaka Nishioka¹, Koukou Suu¹ (ULVAC Inc.¹)

[27p-F2-15] Resistive Switching Properties of SiO_x/TiO₂ Multi-Stack in Ti-electrode MIM Diodes

^○（M2）Motoki Fukusima¹, Akio Ohta², Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

Session information

[27p-F2-1~15] 6.3 Oxide-based electronics