[27p-G20-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

Wed. Mar 27, 2013 1:30 PM - 4:15 PM G20 (B5 4F-2404)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-G20-0] Lunch(90min)

[27p-G20-1] Effects of Ge/Al thickness on Al-induced crystallization of Ge on glass substrates

^○Koki Nakazawa¹, Kaoru Toko², Noritaka Usami³, Takashi Suemasu² (Univ. of Tsukuba¹, Univ. of Tsukuba², Tohoku Univ.³)

[27p-G20-2] Low-temperature formation of polycrystalline Ge films on insulators by supersaturation-controlled Al-induced crystallization

^○Ryohei Numata¹, Kaoru Toko¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Tohoku Univ.², JST-CREST³)

[27p-G20-3] Low-temperature formation of orientation-controlled Si/Al/glass structures by inverted Al-induced crystallization

^○Ryohei Numata¹, Kaoru Toko¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Tohoku Univ.², JST-CREST³)

[27p-G20-4] Ni-Catalyst Mediated Solid Phase Epitaxy of a-Ge on Single-Crystal Seeding Substrates

^○Jonghyeok Park^1,2, Akira Ooato¹, Tsuneharu Suzuki¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹, JSPS Research Fellow²)

[27p-G20-5] △Photon energy dependence of soft X-ray crystallization for a-Ge and a-SiGe films

^○Yuki Maruyama¹, Shota Kino¹, Akira Heya¹, Naoto Matsuo¹, Sho Amano², Syuji Miyamoto², Kazuhiro Kanda², Takayasu Mochizuki², Kaoru Toko³, Taizoh Sadoh³, Masanobu Miyao³ (Univ.of Hyogo¹, LASTI Univ.of Hyogo², Kyusyu Univ.³)

[27p-G20-5.1] Break(15min)

[27p-G20-6] Redistribution of Sn through Crystallization of a-Ge/Sn/c-Ge Structure

^○Yuki Tojo¹, Yuki Kinoshita¹, Ryo Matsumura¹, Tomoaki Nishimura², Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹, Research Center of Ion Beam Technology, Hosei Univ.²)

[27p-G20-7] Low Temperature SiGe Mixing in a-Ge_1-xSn_x/Si(100) Structure

^○Hironori Chikita¹, Ryo Matsumura¹, Yuki Tojo¹, Yuki Kinoshita¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹)

[27p-G20-8] Stabilization of GOI(111) Melting-Growth by Narrowing Strip Width

^○Shunpei Muta¹, Masanao Takahashi¹, M. Anisuzzaman¹, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ.¹)

[27p-G20-9] Growth Velocity during SiGe-Mixing-Triggerd Rapid-Melting-Growth -Correlation with Lateral Profile of Electrical Properties-

^○Ryo Matsumura¹, Yuki Tojo¹, Masashi Kurosawa^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹, JSPS Research Fellow²)

[27p-G20-10] Formation of segregation-free large-grain SiGe crystals on insulator by rapid melting growth

^○Ryusuke Kato¹, Ryo Matsumura¹, Tojo Yuki¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics. Kyushu Univ.¹)

Session information

[27p-G20-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals