Session information

Symposium(Oral presentation)

Symposium » ・Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

[27p-G4-1~11] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --As an approach starting from material physics for device improvement

Wed. Mar 27, 2013 1:40 PM - 5:45 PM G4 (B5 1F-2104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-G4-1] Recent progress of evaluation of surfaces and interfaces in GaN-based materials --as an approach starting from material physics for device improvement--

^○Kenji Shiojima¹, Seiji Nakamura² (Univ. of Fukui¹, Tokyo Metropolitan Univ.²)

[27p-G4-2] The Role of SRH Model：From Side-gating Effects to Current Collapse

^○Yasuo Ohno¹ (The Univ. of Tokushima¹)

[27p-G4-3] DLTS studies of point defects in GaN

^○Yutaka Tokuda¹ (Aichi Inst. of Technol.¹)

[27p-G4-4] Plasma-Induced Defects in III-Nitrides and Other III-V Compound Semiconductors

^○Tsugunori Okumura¹, Seiji Nakamura¹ (Tokyo Metropolitan Univ.¹)

[27p-G4-4.1] Break(15min)

[27p-G4-5] Evaluation of low-Mg-doped p-GaN Schottky diodes

^○Kenji Shiojima¹ (Univ. of Fukui¹)

[27p-G4-6] Characterization and control of surfaces and interfaces of InAlN/GaN heterostructures

^○Masamichi Akazawa¹, Tamotsu Hashizume^1,2 (Hokkaido University¹, JST-CREST²)

[27p-G4-7] Gas species effects on degradation of electrical properties of n-GaN upon plasma exposure

Naoki Hongo¹, ^○Takuma Takimoto¹, Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

[27p-G4-8] △Piezoelectric Effect and Charged Surface States at AlGaN/GaN Heterojunctions

^○Miwa Hokii¹, Hiroyuki Sakaki¹, Yoshihiro Akiyama¹, masato ohmori¹ (Toyota Technological. Inst.¹)

[27p-G4-9] Improvement of the current collapse in GaN HEMT using the SiN passivation layer deposited by electron cyclotron resonance-sputter method

^○Chihoko Mizue¹, Hiroyuki Ichikawa¹, Kazutaka Inoue¹ (Transmission Device Lab. SEI¹)

[27p-G4-10] △Insulating properties of Al₂O₃ for GaN MIS gate insulator by plasma-assisted atomic layer deposition

^○Koji Yoshitsugu¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, JST-CREST²)

[27p-G4-11] △Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3

^○Shirou Ozaki¹, Toshihiro Ohki¹, Masahito Kanamura¹, Tadahiro Imada¹, Norikazu Nakamura¹, Naoya Okamoto¹, Toyoo Miyajima¹, Toshihide Kikkawa¹ (Fujitsu Laboratories Ltd.¹)

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